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1

Complete optical characterization of the SiO2/Si system by spectroscopic ellipsometry, spectroscopic reflectometry and atomic force microscopy

Ohlídal, I., Franta, D., Pinčík, E., Ohlídal, M.

Journal:

Surface and Interface Analysis

Year:

1999

Language:

english

File:

PDF, 78 KB

english, 1999

2

Proton Implantation Induced Damage to Heavily Doped n-GaAs as Envisaged by Charge Deep-Level Transient Spectroscopy

I. Thurzo, E. Pincík, P. Cicmanec

Journal:

physica status solidi (a)

Year:

1997

Language:

english

File:

PDF, 262 KB

english, 1997

3

On the influence of an ultrathin Al overlayer on GaAs plasma oxide growth kinetics

E. Pinčík, Š. Lányi, V. Nádaždy

Journal:

Thin Solid Films

Year:

1994

Language:

english

File:

PDF, 530 KB

english, 1994

4

Low temperature plasma anodic oxidation of silicon through thin aluminium overlayers

Jiří Bartoš, Emil Pinčík

Journal:

Thin Solid Films

Year:

1994

Language:

english

File:

PDF, 441 KB

english, 1994

5

Passivation of a-Si:H-based structures in KCN and HCN solutions and its application on p-i-n solar cell

Pinčík, Emil, Kobayashi, Hikaru, Takahashi, Masao, Brunner, Róbert, Jurečka, Stanislav

Journal:

Journal of the Chinese Advanced Materials Society

Year:

2013

Language:

english

File:

PDF, 587 KB

english, 2013

6

[IEEE ASDAM '98. Conference Proceedings. Second International Conference on Advances Semiconductor Devices and Microsystems - Smolenice Castle, Slovakia (5-7 Oct. 1998)] ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) - Band gap states in a-SiGe:H alloys determined from charge DLTS experiments

Zeman, M., Nadazdy, V., Pincik, E., van Swaaij, R.A.C.M.M.

Year:

1998

Language:

english

File:

PDF, 336 KB

english, 1998

7

Lattice Deformation and Defect Structure of GaAs/Native Oxide Interfaces

Lànyi, S., Wolcyrz, M., Pinčík, Emil, Nadazdy, V.

Journal:

Materials Science Forum

Year:

1989

File:

PDF, 341 KB

1989

8

[IEEE 2015 13th International Conference on Emerging eLearning Technologies and Applications (ICETA) - Starý Smokovec, High Tatras, Slovakia (2015.11.26-2015.11.27)] 2015 13th International Conference on Emerging eLearning Technologies and Applications (ICETA) - Gloffer — Framework for the implementation of portal solutions for E-commerce

Fasuga, Radoslav, Rydel, Jiri, Kubanda, Eduard, Micanin, Jan, Pilik, Vaclav, Stastna, Pavla, Tyn, Ondrej, Rodek, Michal, Pincik, Andrej

Year:

2015

Language:

english

File:

PDF, 195 KB

english, 2015

9

Anomaly in the growth rate of anodic oxide films due to the presence of a (Sm + Sm2O3) overlayer at a GaAs surface

E. Pinčík, J. Kocanda, J. Bartoš, V. Nadaždy, M. Jergel

Journal:

Thin Solid Films

Year:

1996

Language:

english

File:

PDF, 988 KB

english, 1996

10

Lattice strain and defect structure of GaAs/native oxide interfaces

Š. Lányi, E. Pinčík, V. Nádaždy, M. Wolcyrz

Journal:

Progress in Surface Science

Year:

1990

Language:

english

File:

PDF, 185 KB

english, 1990

11

Passivation of shallow donors in GaAs by oxygen plasma exposure

I. Thurzo, E. Pinčik, L. Harmatha, V. Nágl, M. Gaži

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 1004 KB

english, 1991

12

On the accumulation capacitance of Si3N4/Si/GaAs structures fabricated in an electron cyclotron resonance plasma

J. Ivančo, O.E. Balvinsky, I. Thurzo, J. Bartoǒs, E. Pinčik

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 555 KB

english, 1993

13

Formation of anodic plasma oxides on InP, GaAs and Si through Al and Sm overlayers

E. Pinčík, I. Thurzo, V. Nádaždy, J. Bartoš, M. Jergel, J. Kocanda

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 821 KB

english, 1994

14

Excess capacitance of Al/n-GaAs Schottky diodes prepared on Ar-(Ar + H)-ion-beam-etched surfaces

I. Thurzo, E. Pinčík

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 932 KB

english, 1994

15

Experimental study of passivating ion-beam-induced distributed energy levels in n-GaAs by hydrogen species from boiling water

I. Thurzo, E. Pincik, G. Papaioannou, P. Dimitrakis, N. Arpatzanis

Journal:

Applied Surface Science

Year:

1995

Language:

english

File:

PDF, 450 KB

english, 1995

16

Plasma anodic oxidation of semiinsulating GaAs

Emil Pinčík, Katarína Gmucová, Jiří Bartoš, Michal Kučera, Matej Jergel, Robert Brunner

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 600 KB

english, 1996

17

Passivation of Si and a-Si:H surfaces by thin oxide and oxy-nitride layers

E. Pinčík, H. Kobayashi, J. Rusnák, M. Takahashi, R. Brunner, M. Jergel, A. Morales-Acevedo, L. Ortega, J. Kákoš

Journal:

Applied Surface Science

Year:

2006

Language:

english

File:

PDF, 285 KB

english, 2006

18

On a presence of SimHn clusters in a-Si:H/c-Si structures

M. Kopáni, E. Pinčík, H. Kobayashi, M. Takahashi, N. Fujiwara, R. Brunner, M. Jergel, L. Ortega

Journal:

Applied Surface Science

Year:

2006

Language:

english

File:

PDF, 139 KB

english, 2006

19

On interface properties of ultra-thin and very-thin oxide/a-Si:H structures prepared by oxygen based plasmas and chemical oxidation

Emil Pinčík, Hikaru Kobayashi, Rudolf Hajossy, Helena Glesková, Masao Takahashi, Matej Jergel, Róbert Brunner, Luc Ortega, Michal Kučera, Martin Kráľ, Jaroslav Rusnák

Journal:

Applied Surface Science

Year:

2007

Language:

english

File:

PDF, 1.68 MB

english, 2007

20

Passivation of defect states in Si-based and GaAs structures

E. Pinčík, H. Kobayashi, R. Brunner, M. Takahashi, Yueh-Ling Liu, L. Ortega, K. Imamura, M. Jergel, J. Rusnák

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 337 KB

english, 2008

21

Solution of the optical parameters of the thin film systems and interfaces

S. Jurečka, E. Pinčík, R. Brunner

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 294 KB

english, 2008

22

International conference: Progress in Applied Surface, Interface, and Thin Film Science – Solar Renewable Energy News II (SURFINT – SREN II), Florence, November 15–20, 2009, Italy

Journal:

Applied Surface Science

Year:

2010

Language:

english

File:

PDF, 76 KB

english, 2010

23

On the influence of the surface roughness onto the ultrathin SiO2/Si structure properties

Stanislav Jurečka, Hikaru Kobayashi, Masao Takahashi, Taketoshi Matsumoto, Mária Jurečková, Ferdinand Chovanec, Emil Pinčík

Journal:

Applied Surface Science

Year:

2010

Language:

english

File:

PDF, 801 KB

english, 2010

24

On photoluminescence properties of a-Si:H-based structures

R. Brunner, E. Pinčík, H. Kobayashi, M. Kučera, M. Takahashi, J. Rusnák

Journal:

Applied Surface Science

Year:

2010

Language:

english

File:

PDF, 671 KB

english, 2010

25

On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process

E. Pincik, H. Kobayashi, J. Rusnak, W.B. Kim, R. Brunner, L. Malinovsky, T. Matsumoto, K. Imamura, M. Jergel, M. Takahashi, Y. Higashi, M. Kucera, M. Mikula

Journal:

Applied Surface Science

Year:

2010

Language:

english

File:

PDF, 1.44 MB

english, 2010

26

Some peculiar features of small-signal charge DLTS response of GaAs MOS capacitors

I. Thurzo, E. Pinčík

Journal:

physica status solidi (a)

Year:

1984

Language:

english

File:

PDF, 598 KB

english, 1984

27

Attempts to find a correlation between the GaAs plasma oxide growth conditions and the charge DLTS response of interface states

I. Thurzo, E. Pinčík

Journal:

physica status solidi (a)

Year:

1987

Language:

english

File:

PDF, 265 KB

english, 1987

28

On the structure of the GraAs-plasma oxide interface

I. Thuezo, J. Baetoš, E. Pinčík

Journal:

physica status solidi (a)

Year:

1987

Language:

english

File:

PDF, 369 KB

english, 1987

29

Attempts to Probe the Semi-Insulating GaAs–Plasma Oxide Interface by Small-Signal Charge DLTS

I. Thurzo, E. Pinčík

Journal:

physica status solidi (a)

Year:

1990

Language:

english

File:

PDF, 616 KB

english, 1990

30

Electric-Field-Enhanced Emission from a Discrete Energy Level at the GaAs–Oxide Interface

I. Thurzo, V. Nádaždy, E. Pinčík

Journal:

physica status solidi (a)

Year:

1990

Language:

english

File:

PDF, 517 KB

english, 1990

31

Characterization of MAOS Structures on GaAs

J. Bartoš, E. Pinčík, I. Thurzo, B. Matátko, T. Lalinský

Journal:

physica status solidi (a)

Year:

1990

Language:

english

File:

PDF, 328 KB

english, 1990

32

Toward Modelling Correlated DLTS Spectra from Al/Plasma Oxide/Semi-Insulating GaAs(Cr) Devices

K. Gmucová, I. Thurzo, E. Pinčík

Journal:

physica status solidi (a)

Year:

1993

Language:

english

File:

PDF, 436 KB

english, 1993

33

The Effect of the Semiconductor Surface Treatment on LB Film/Si Interface

D. Barančok, J. Cirák, J. Liday, E. Pinčík, P. Tomčík

Journal:

physica status solidi (a)

Year:

1995

Language:

english

File:

PDF, 196 KB

english, 1995

34

Platinum contamination of oxide grown by plasma anodization of gallium arsenide

Š. Lányi, F. Pavlyák, E. Pinčik

Journal:

Surface and Interface Analysis

Year:

1988

Language:

english

File:

PDF, 387 KB

english, 1988

35

Photoluminescence of very thin oxide/a-Si:H structures passivated in HCN solutions

E. Pinčík, R. Brunner, H. Kobayashi, M. Takahashi, M. Kučera

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 211 KB

english, 2008

36

Solid state surfaces and interfaces

Reinhard Denecke, Józef Korecki, Emil Pinčik, Pavel Jelinek, Krzysztof Malarz

Journal:

Central European Journal of Physics

Year:

2009

Language:

english

File:

PDF, 199 KB

english, 2009

37

Study of density of interface states in MOS structure with ultrathin NAOS oxide

Stanislav Jurečka, Hikaru Kobayashi, Woo-Byoung Kim, Masao Takahashi, Emil Pinčík

Journal:

Central European Journal of Physics

Year:

2012

Language:

english

File:

PDF, 304 KB

english, 2012

38

Coplanar and non-coplanar x-ray reflectivity characterization of lateral W/Si multilayer gratings

Mikulík, P, Jergel, M, Baumbach, T, Majková, E, Pincík, E, Luby, S, Ortega, L, Tucoulou, R, Hudek, P, Kostic, I

Journal:

Journal of Physics D Applied Physics

Year:

2001

Language:

english

File:

PDF, 1.17 MB

english, 2001

39

New approach to the preparation of GaAs oxide films utilizing an ultrathin Sm overlayer

E. Pinčík, V. Nádaždy, M. Wolcyrz, J. Kocanda, M. Jergel, Š. Lányi

Journal:

Czechoslovak Journal of Physics

Year:

1993

Language:

english

File:

PDF, 204 KB

english, 1993

40

An interpretation of dlts spectra of Al/Si3N4/ultrathin SI/GaAs structures — Effect of quantum well or interface states?

J. Bartoš, E. Pinčík, I. Thurzo, O. E. Balvinskij, J. Ivančo

Journal:

Czechoslovak Journal of Physics

Year:

1993

Language:

english

File:

PDF, 184 KB

english, 1993

41

Current-voltage characteristics and charge DLTS spectra of proton-bombarded Schottky diodes on semi-insulating GaAs

I. Thurzo, L. Hrubčín, J. Bartoš, E. Pinčík

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1993

Language:

english

File:

PDF, 691 KB

english, 1993

42

Passivation of Si-based structures in HCN and KCN solutions

Emil Pinčík, Hikaru Kobayashi, Jaroslav Rusnák, Masao Takahashi, Milan Mikula, Woo Byoung Kim, Michal Kučera, Robert Brunner, Stanislav Jurečka

Journal:

Applied Surface Science

Year:

2012

Language:

english

File:

PDF, 1.51 MB

english, 2012

43

The effect of KCN passivation on IR spectra of a-Si based structures

Martin Kopani, Milan Mikula, Naozumi Fujiwara, Masao Takahashi, Emil Pinčík

Journal:

Applied Surface Science

Year:

2012

Language:

english

File:

PDF, 380 KB

english, 2012

44

Properties of charge states in MOS structure with ultrathin oxide layer

Stanislav Jurečka, Hikaru Kobayashi, Masao Takahashi, Taketoshi Matsumoto, Emil Pinčík

Journal:

Applied Surface Science

Year:

2012

Language:

english

File:

PDF, 690 KB

english, 2012

45

Spatial distribution of dangling bonds in undoped hydrogenated amorphous silicon observed by solid-state voltcoulometry

V Nádazdy, R Durny, E Pincik, I Thurzo, M Kumeda, T Shimizu

Journal:

Journal of Non-Crystalline Solids

Year:

2000

Language:

english

File:

PDF, 214 KB

english, 2000

46

Defect re-distribution in amorphous silicon below equilibration temperature

R.A.C.M.M van Swaaij, V Nádazdy, M Zeman, E Pincik, J.W Metselaar

Journal:

Journal of Non-Crystalline Solids

Year:

2000

Language:

english

File:

PDF, 112 KB

english, 2000

47

On formation of thin SiO2/a-Si:H interface when biased oxidized semiconductor surface interacts with plasma or liquid solution

Emil Pinčík, Hikaru Kobayashi, Masao Takahashi, Róbert Brunner, Stanislav Jurečka, Jaroslav Rusnák

Journal:

Central European Journal of Physics

Year:

2007

Language:

english

File:

PDF, 458 KB

english, 2007

48

FT IR spectroscopy of nitric acid oxidation of silicon with hafnium oxide very thin layer

Kopani, M., Mikula, M., Pinčík, E., Kobayashi, H., Takahashi, M.

Journal:

Applied Surface Science

Year:

2014

Language:

english

File:

PDF, 1.22 MB

english, 2014

49

Multifractal analysis of textured silicon surfaces

Jurečka, Stanislav, Angermann, Heike, Kobayashi, Hikaru, Takahashi, Masao, Pinčík, Emil

Journal:

Applied Surface Science

Year:

2014

Language:

english

File:

PDF, 1.32 MB

english, 2014

50

FT IR spectroscopy of silicon oxide and HfSiOx layer formation

Kopani, M., Mikula, M., Pinčík, E., Kobayashi, H., Takahashi, M.

Journal:

Applied Surface Science

Year:

2014

Language:

english

File:

PDF, 323 KB

english, 2014